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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5480 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *Built-in Damper Diode APPLICATIONS *Designed for horizontal deflection output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w VALUE scs .i UNIT 1500 V 5 V 14 A 28 A 50 W .cn mi e IC(peak) Collector Current-Peak IC(surge) Collector Current-Surge Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5480 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2.5A 1.5 V ICES Collector Cutoff Current VCE= 1500V; RBE= 0 500 A hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain tf Fall Time w w. w sem isc IC= 10A; VCE= 5V ICP= 7A, IB1= 2.4A; fH= 31.5kHz .cn i 4 5 25 7 0.4 s isc Websitewww.iscsemi.cn 2 |
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